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A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors

dankan 添加于 2011/4/21 14:35:50  2029次阅读 | 1次推荐 | 0个评论

Keywords:ferroelectric diodes;nonvolatile memory;thin‐film capacitorsA ferroelectric‐resistive random access memory consisting of a conductive BiFeO3 epitaxial thin film with a unipolar diode current modulated by electric polarization orientation is reported. This device has a memory that lasts for months, a sufficiently high on current and on/off ratio to permit ordinary sense amplifiers to measure “1” or “0”, and is fully compatible with complementary metal‐oxide semiconductor processing.

作 者:Jiang, An Quan; Wang, Can; Jin, Kui Juan; Liu, Xiao Bing; Scott, James F.; Hwang, Cheol Seong; Tang, Ting Ao; Lu, Hui Bin; Yang, Guo Zhen
期刊名称: Advanced Materials
期卷页: 2011/03/11 第23卷 第10期 1277~1281页
学科领域:信息科学 » 电子学与信息系统 »
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原文链接:http://onlinelibrary.wiley.com/doi/10.1002/adma.201004317/abstract
DOI: 10.1002/adma.201004317
ISBN: 1521-4095
关键词: ferroelectric diodes;
相关报道: http://paper.sciencenet.cn/htmlpaper/20114211438978816337.shtm
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