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Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

AmandaPisces 添加于 2013/3/15 13:11:15  8353次阅读 | 1次推荐 | 1个评论

The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e2, accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.

作 者: Qi-Kun Xue, Cui-Zu Chang, Jinsong Zhang, Xiao Feng, Jie Shen, Zuocheng Zhang
期刊名称: Science
期卷页: March 14, 2013, 第卷 第期 ~页
学科领域:数理科学 » 物理学 » 粒子物理学和场论
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原文链接:http://www.sciencemag.org/content/early/2013/03/13/science.1234414.abstract?sid=0a9a768b-8be1-42b4-85d4-61f1d758c43e
DOI: 10.1126/science.1234414
ISBN: 0036-8075
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