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Detecting p-type conduction in Ba-doped InN

zhpd55 添加于 2013/2/21 18:48:51  52788次阅读 | 0次推荐 | 160个评论

The buried p-type conduction is demonstrated in InN with Ba ion implantation dose increases up to 1*10^{15} ions/cm^2. The in-plane lattice parameter increases by about 1.2% deep in the film due to larger Ba replacing smaller indium (In). The n-type conductivity is also detected at the surface, which may results from the N-deficiency. First-principles calculations show that holes at the surface, induced by Ba ion implantation, are compensated by extra electrons from the In adlayer. The p-type carriers dominate in the bulk layers, which is in good agreement with the experimental results.

作 者:Q. Y. Xie, W. M. Xie, J. L. Wang, H. P. Zhu, J. H. Yang et al.
期刊名称: APPLIED PHYSICS LETTERS
期卷页: published online 1 February 2013 第102卷 第期 042109页
学科领域:信息科学 » 光学和光电子学 » 光学和光电子材料
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原文链接:http://dx.doi.org/10.1063/1.4790281
DOI: 10.1063/1.4790281
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